Senior / Staff Engineer - GaN Epitaxy

#WeAreIn for driving decarbonization and digitalization.

As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.

Are you in?

We are on a journey to create the best Infineon for everyone.This means we embrace diversity and inclusion and welcome everyone for who they are. At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are committed to give all applicants and employees equal opportunities. We base our recruiting decisions on the applicant´s experience and skills. Learn more about our various contact channels.

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Job Description

In your new role you will :

• Development and optimisation of GaN on Si & GaN on Sapphire MOCVD epitaxy processes for power switching applications
• Design GaN epitaxial layer stacks and growth recipes based on device requirements and performance targets
• Develop and implement new epitaxial processes for advanced wafer products
• Troubleshoot and resolve issues that arise during material growth to ensure high-quality epitaxial layers
• Work closely with device engineers to develop next-generation technologies

Your Profile

You are best equipped for this task if you have :